IPL65R190E6AUMA1
MOSFET N-CH 650V 20.2A 4VSON
Transistors Fets Mosfets Single
4-PowerTSFN
CoolMOS™ E6
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | IPL65R190E6AUMA1 |
| Package / Case | 4-PowerTSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 650 V |
| Rds On (Max) | 190mOhm @ 7.3A, 10V |
| Vgs(th) (Max) | 3.5V @ 700µA |
| Gate Charge (Qg) | 73 nC @ 10 V |
| Input Capacitance (Ciss) | 1620 pF @ 100 V |
| Power Dissipation (Max) | 151W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | PG-VSON-4 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
IPL65R190E6AUMA1 by Infineon Technologies is an N-channel power MOSFET rated at 650 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 4-PowerTSFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 190mOhm @ 7.3A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IPL65R190E6AUMA1
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3.5V @ 700µA |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 7.3A, 10V |
| Power Dissipation (Max) | 151W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 73 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1620 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 20.2A (Tc) |
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