IPG16N10S4L61AATMA1
MOSFET 2N-CH 100V 16A 8TDSON
Transistors Fets Mosfets Arrays
8-PowerVDFN
Automotive, AEC-Q101, OptiMOS™
Active
$0.43 / unit (market reference)
MOQ: 699 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | IPG16N10S4L61AATMA1 |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount, Wettable Flank |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 100V |
| Rds On (Max) | 61mOhm @ 16A, 10V |
| Vgs(th) (Max) | 2.1V @ 90µA |
| Gate Charge (Qg) | 11nC @ 10V |
| Input Capacitance (Ciss) | 845pF @ 25V |
| Power Dissipation (Max) | 29W |
| Supplier Device Package | PG-TDSON-8-10 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IPG16N10S4L61AATMA1 by Infineon Technologies is an N-channel power MOSFET rated at 100V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerVDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 61mOhm @ 16A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IPG16N10S4L61AATMA1
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Power - Max | 29W |
| Vgs(th) (Max) @ Id | 2.1V @ 90µA |
| Rds On (Max) @ Id, Vgs | 61mOhm @ 16A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Input Capacitance (Ciss) (Max) @ Vds | 845pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 16A |
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