IPDQ60R010S7AXTMA1
AUTOMOTIVE PG-HDSOP-22
Transistors Fets Mosfets Single
22-PowerBSOP Module
Automotive, AEC-Q101, CoolMOS™
Active
$34.85 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | IPDQ60R010S7AXTMA1 |
| Package / Case | 22-PowerBSOP Module |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 600 V |
| Rds On (Max) | 10mOhm @ 50A, 12V |
| Vgs(th) (Max) | 4.5V @ 3.08mA |
| Gate Charge (Qg) | 318 nC @ 12 V |
| Input Capacitance (Ciss) | 11987 pF @ 300 V |
| Power Dissipation (Max) | 694W (Tc) |
| Drive Voltage | 12V |
| Supplier Device Package | PG-HDSOP-22-1 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IPDQ60R010S7AXTMA1 by Infineon Technologies is an N-channel power MOSFET rated at 600 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 22-PowerBSOP Module package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 10mOhm @ 50A, 12V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IPDQ60R010S7AXTMA1
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4.5V @ 3.08mA |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 50A, 12V |
| Power Dissipation (Max) | 694W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 318 nC @ 12 V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11987 pF @ 300 V |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
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