PC
Infineon TechnologiesTO-263-8, D²Pak (7 Leads + Tab), TO-263CARoHS

IPBE65R190CFD7AATMA1

MOSFET N-CH 650V 14A TO263-7

IPBE65R190CFD7AATMA1 by Infineon Technologies
Subcategory

Transistors Fets Mosfets Single

Package

TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

Series

Automotive, AEC-Q101, CoolMOS™

Status

Active

$5.64 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandInfineon Technologies
ModelIPBE65R190CFD7AATMA1
Package / CaseTO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)650 V
Rds On (Max)190mOhm @ 6.4A, 10V
Vgs(th) (Max)4.5V @ 320µA
Gate Charge (Qg)7 nC @ 10 V
Input Capacitance (Ciss)1291 pF @ 400 V
Power Dissipation (Max)77W (Tc)
Supplier Device PackagePG-TO263-7-11
RoHSRoHS
Part StatusActive

Application & Notes

IPBE65R190CFD7AATMA1 by Infineon Technologies is an N-channel power MOSFET rated at 650 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-8, D²Pak (7 Leads + Tab), TO-263CA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 190mOhm @ 6.4A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4.5V @ 320µA
Rds On (Max) @ Id, Vgs190mOhm @ 6.4A, 10V
Power Dissipation (Max)77W (Tc)
Gate Charge (Qg) (Max) @ Vgs7 nC @ 10 V
Drain to Source Voltage (Vdss)650 V
Input Capacitance (Ciss) (Max) @ Vds1291 pF @ 400 V
Current - Continuous Drain (Id) @ 25°C14A (Tc)

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