IMZA65R030M1HXKSA1
SILICON CARBIDE MOSFET, PG-TO247
Transistors Fets Mosfets Single
TO-247-4
CoolSiC™
Active
$24.03 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | IMZA65R030M1HXKSA1 |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 650 V |
| Rds On (Max) | 42mOhm @ 29.5A, 18V |
| Vgs(th) (Max) | 5.7V @ 8.8mA |
| Gate Charge (Qg) | 48 nC @ 18 V |
| Input Capacitance (Ciss) | 1643 pF @ 400 V |
| Power Dissipation (Max) | 197W (Tc) |
| Drive Voltage | 18V |
| Supplier Device Package | PG-TO247-4-3 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IMZA65R030M1HXKSA1 by Infineon Technologies is an N-channel power MOSFET rated at 650 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-4 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 42mOhm @ 29.5A, 18V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IMZA65R030M1HXKSA1
Alternatives & Replacements
View All →IPZ60R017C7XKSA1
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C3M0030090K
SICFET N-CH 900V 63A TO247-4
C3M0120100K
SICFET N-CH 1000V 22A TO247-4L
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | +20V, -2V |
| Technology | SiCFET (Silicon Carbide) |
| Vgs(th) (Max) @ Id | 5.7V @ 8.8mA |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 29.5A, 18V |
| Power Dissipation (Max) | 197W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 18 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1643 pF @ 400 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Current - Continuous Drain (Id) @ 25°C | 53A (Tc) |
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