Infineon Technologies-RoHS
IMBG65R022M1HXTMA1
SILICON CARBIDE MOSFET PG-TO263-
Category
Subcategory
Transistors Fets Mosfets Single
Package
-
Status
Active
$23.29 / unit (market reference)
MOQ: 1000 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
✅ 365-Day Warranty🚚 Global Shipping
Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | IMBG65R022M1HXTMA1 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IMBG65R022M1HXTMA1 by Infineon Technologies is an N-channel power MOSFET rated at - / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The - package offers good thermal performance for SMT mounting. Key spec: Rds(on) max -. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IMBG65R022M1HXTMA1
Alternatives & Replacements
View All →Rochester Electronics, LLCStock-
PMXB65UPE147
P-CHANNEL MOSFET
Request QuoteRFQ →
Rochester Electronics, LLCStock-
NXS7002AK215
SMALL SIGNAL FET
Request QuoteRFQ →
Rochester Electronics, LLCStock-
UPA2351T1G(2)-E4-A
POWER FIELD-EFFECT TRANSISTOR
Request QuoteRFQ →
Rochester Electronics, LLCStock-
RJK0397DPA-0G#J7A
POWER TRANSISTOR, MOSFET
Request QuoteRFQ →
Rochester Electronics, LLCStock-
PMXB75UPE147
P-CHANNEL MOSFET
Request QuoteRFQ →
Rochester Electronics, LLCStock-
TBB1016RMTL-E
RF N-CHANNEL MOSFET
Request QuoteRFQ →
All Technical Specifications
Request a Quote
Submit your quantity and details — we will reply within 24 hours.