IMBG120R220M1HXTMA1
SICFET N-CH 1.2KV 13A TO263
Transistors Fets Mosfets Single
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
CoolSiC™
Active
$8.84 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | IMBG120R220M1HXTMA1 |
| Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 1200 V |
| Rds On (Max) | 294mOhm @ 4A, 18V |
| Vgs(th) (Max) | 5.7V @ 1.6mA |
| Gate Charge (Qg) | 9.4 nC @ 18 V |
| Input Capacitance (Ciss) | 312 pF @ 800 V |
| Power Dissipation (Max) | 83W (Tc) |
| Supplier Device Package | PG-TO263-7-12 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IMBG120R220M1HXTMA1 by Infineon Technologies is an N-channel power MOSFET rated at 1200 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-8, D²Pak (7 Leads + Tab), TO-263CA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 294mOhm @ 4A, 18V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IMBG120R220M1HXTMA1
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | +18V, -15V |
| Technology | SiCFET (Silicon Carbide) |
| FET Feature | Standard |
| Vgs(th) (Max) @ Id | 5.7V @ 1.6mA |
| Rds On (Max) @ Id, Vgs | 294mOhm @ 4A, 18V |
| Power Dissipation (Max) | 83W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 9.4 nC @ 18 V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 312 pF @ 800 V |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
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