IMBF170R450M1XTMA1
SICFET N-CH 1700V 9.8A TO263-7
Transistors Fets Mosfets Single
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
CoolSiC™
Active
$10.06 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | IMBF170R450M1XTMA1 |
| Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 1700 V |
| Rds On (Max) | 450mOhm @ 2A, 15V |
| Vgs(th) (Max) | 5.7V @ 2.5mA |
| Gate Charge (Qg) | 11 nC @ 12 V |
| Input Capacitance (Ciss) | 610 pF @ 1000 V |
| Power Dissipation (Max) | 107W (Tc) |
| Drive Voltage | 12V, 15V |
| Supplier Device Package | PG-TO263-7-13 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IMBF170R450M1XTMA1 by Infineon Technologies is an N-channel power MOSFET rated at 1700 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-8, D²Pak (7 Leads + Tab), TO-263CA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 450mOhm @ 2A, 15V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IMBF170R450M1XTMA1
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | +20V, -10V |
| Technology | SiCFET (Silicon Carbide) |
| Vgs(th) (Max) @ Id | 5.7V @ 2.5mA |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 2A, 15V |
| Power Dissipation (Max) | 107W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 12 V |
| Drain to Source Voltage (Vdss) | 1700 V |
| Input Capacitance (Ciss) (Max) @ Vds | 610 pF @ 1000 V |
| Drive Voltage (Max Rds On, Min Rds On) | 12V, 15V |
| Current - Continuous Drain (Id) @ 25°C | 9.8A (Tc) |
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