IKW03N120H2FKSA1
IGBT 1200V 9.6A 62.5W TO247-3
Transistors Igbts Single
TO-247-3
Obsolete
$1.37 / unit (market reference)
MOQ: 219 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | IKW03N120H2FKSA1 |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 62.5 W |
| Supplier Device Package | PG-TO247-3-1 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
IKW03N120H2FKSA1 by Rochester Electronics, LLC is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IKW03N120H2FKSA1
Alternatives & Replacements
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All Technical Specifications
| Input Type | Standard |
| Gate Charge | 22 nC |
| Power - Max | 62.5 W |
| Test Condition | 800V, 3A, 82Ohm, 15V |
| Switching Energy | 290µJ |
| Td (on/off) @ 25°C | 9.2ns/281ns |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 3A |
| Reverse Recovery Time (trr) | 42 ns |
| Current - Collector (Ic) (Max) | 9.6 A |
| Current - Collector Pulsed (Icm) | 9.9 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
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