IGW30N60TPXKSA1
IGBT TRENCH/FS 600V 53A TO247-3
Transistors Igbts Single
TO-247-3
TrenchStop™
Not For New Designs
$2.58 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | IGW30N60TPXKSA1 |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Power Dissipation (Max) | 200 W |
| Supplier Device Package | PG-TO247-3 |
| RoHS | RoHS |
| Part Status | Not For New Designs |
Application & Notes
IGW30N60TPXKSA1 by Infineon Technologies is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IGW30N60TPXKSA1
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All Technical Specifications
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Gate Charge | 130 nC |
| Power - Max | 200 W |
| Test Condition | 400V, 30A, 10.5Ohm, 15V |
| Switching Energy | 710µJ (on), 420µJ (off) |
| Td (on/off) @ 25°C | 15ns/179ns |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 30A |
| Current - Collector (Ic) (Max) | 53 A |
| Current - Collector Pulsed (Icm) | 90 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
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