Integra Technologies Inc.PL84A1RoHS
IGN1011L1200
GAN, RF POWER TRANSISTOR, L-BAND
Category
Subcategory
Transistors Fets Mosfets Rf
Package
PL84A1
Status
Active
$914.14 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Integra Technologies Inc. |
| Model | IGN1011L1200 |
| Package / Case | PL84A1 |
| Supplier Device Package | PL84A1 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IGN1011L1200 by Integra Technologies Inc. is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The PL84A1 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| Gain | 16.8dB |
| Frequency | 1.03GHz ~ 1.09GHz |
| Current - Test | 160 mA |
| Power - Output | 1250W |
| Voltage - Test | 50 V |
| Transistor Type | HEMT |
| Voltage - Rated | 180 V |
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