Honeywell Aerospace-RoHS
HTNFET-TC
MOSFET N-CH 55V 4-PIN
Category
Subcategory
Transistors Fets Mosfets Single
Package
-
Series
HTMOS™
Status
Active
Price available on request
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Honeywell Aerospace |
| Model | HTNFET-TC |
| Mounting Type | Through Hole |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 55 V |
| Rds On (Max) | 400mOhm @ 100mA, 5V |
| Vgs(th) (Max) | 2.4V @ 100µA |
| Gate Charge (Qg) | 4.3 nC @ 5 V |
| Input Capacitance (Ciss) | 290 pF @ 28 V |
| Power Dissipation (Max) | 50W (Tj) |
| Drive Voltage | 5V |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
HTNFET-TC by Honeywell Aerospace is an N-channel power MOSFET rated at 55 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The - package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 400mOhm @ 100mA, 5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | 10V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.4V @ 100µA |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 100mA, 5V |
| Power Dissipation (Max) | 50W (Tj) |
| Gate Charge (Qg) (Max) @ Vgs | 4.3 nC @ 5 V |
| Drain to Source Voltage (Vdss) | 55 V |
| Input Capacitance (Ciss) (Max) @ Vds | 290 pF @ 28 V |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
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