PC
Rohm Semiconductor8-UDFN Exposed PadRoHS

HS8K1TB

30V NCH+NCH POWER MOSFET

HS8K1TB by Rohm Semiconductor
Subcategory

Transistors Fets Mosfets Arrays

Package

8-UDFN Exposed Pad

Status

Active

$0.80 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

✅ 365-Day Warranty🚚 Global Shipping

Parameters

ParameterValue
BrandRohm Semiconductor
ModelHS8K1TB
Package / Case8-UDFN Exposed Pad
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
FET Type2 N-Channel (Dual)
Drain to Source Voltage (Vdss)30V
Rds On (Max)14.6mOhm @ 10A, 10V, 11.8mOhm @ 11A, 10V
Vgs(th) (Max)2.5V @ 1mA
Gate Charge (Qg)6nC @ 10V, 7.4nC @ 10V
Input Capacitance (Ciss)348pF @ 15V, 429pF @ 15V
Power Dissipation (Max)2W (Ta)
Supplier Device PackageHSML3030L10
RoHSRoHS
Part StatusActive

Application & Notes

HS8K1TB by Rohm Semiconductor is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-UDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 14.6mOhm @ 10A, 10V, 11.8mOhm @ 11A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET Type2 N-Channel (Dual)
FET FeatureStandard
Power - Max2W (Ta)
Vgs(th) (Max) @ Id2.5V @ 1mA
Rds On (Max) @ Id, Vgs14.6mOhm @ 10A, 10V, 11.8mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs6nC @ 10V, 7.4nC @ 10V
Drain to Source Voltage (Vdss)30V
Input Capacitance (Ciss) (Max) @ Vds348pF @ 15V, 429pF @ 15V
Current - Continuous Drain (Id) @ 25°C10A (Ta), 11A (Ta)

Request a Quote

Submit your quantity and details — we will reply within 24 hours.