Toshiba Semiconductor and Storage6-TSSOP, SC-88, SOT-363RoHS
HN3C10FUTE85LF
RF TRANS 2 NPN 12V 7GHZ US6
Category
Subcategory
Transistors Bipolar Bjt Rf
Package
6-TSSOP, SC-88, SOT-363
Status
Active
$0.56 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | HN3C10FUTE85LF |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Power Dissipation (Max) | 200mW |
| Supplier Device Package | US6 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
HN3C10FUTE85LF by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-TSSOP, SC-88, SOT-363 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for HN3C10FUTE85LF
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All Technical Specifications
| Gain | 11.5dB |
| Power - Max | 200mW |
| Transistor Type | 2 NPN (Dual) |
| Frequency - Transition | 7GHz |
| Noise Figure (dB Typ @ f) | 1.1dB @ 1GHz |
| Current - Collector (Ic) (Max) | 80mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 20mA, 10V |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
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