HN1C01FU-Y,LF
NPN + NPN IND. TRANSISTOR VCEO50
Transistors Bipolar Bjt Arrays
6-TSSOP, SC-88, SOT-363
Active
$0.26 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | HN1C01FU-Y,LF |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | 125°C (TJ) |
| Power Dissipation (Max) | 200mW |
| Supplier Device Package | US6 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
HN1C01FU-Y,LF by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-TSSOP, SC-88, SOT-363 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for HN1C01FU-Y,LF
Alternatives & Replacements
View All →BC856BDW1T3G
TRANS 2PNP 65V 0.1A SC88/SC70-6
BC858CDW1T1
TRANS 2PNP 30V 0.1A SOT363
MBT3904DW1T1
TRANS 2NPN 40V 0.2A SOT363
FFB3904
0.2A, 40V, 2-ELEMENT, NPN
FFB2222A
0.5A, 40V, 2-ELEMENT, NPN
NSVT45011MW6T3G
TRANS 2NPN 45V 0.1A SC88/SC70-6
All Technical Specifications
| Power - Max | 200mW |
| Transistor Type | 2 NPN (Dual) |
| Frequency - Transition | 80MHz |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
| Current - Collector (Ic) (Max) | 150mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 2mA, 6V |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.