HN1B04FE-GR,LXHF
AUTO AEC-Q PNP + NPN TR VCEO:-50
Transistors Bipolar Bjt Arrays
SOT-563, SOT-666
Automotive, AEC-Q101
Active
$0.46 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | HN1B04FE-GR,LXHF |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 100mW |
| Supplier Device Package | ES6 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
HN1B04FE-GR,LXHF by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-563, SOT-666 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for HN1B04FE-GR,LXHF
Alternatives & Replacements
View All →PEMX1,315
NOW NEXPERIA PEMX1 - SMALL SIGNA
NSVT3946DXV6T1G
TRANS NPN/PNP 40V 0.2A SOT563
PMBT3946VPN,115
TRANS NPN/PNP 40V 0.2A SOT666
EMX1DXV6T1
TRANS 2NPN 50V 0.1A SOT563
EMZ1DXV6T5
TRANS NPN/PNP 60V 0.1A SOT563
EMZ1DXV6T5G
TRANS NPN/PNP 60V 0.1A SOT563
All Technical Specifications
| Power - Max | 100mW |
| Transistor Type | NPN, PNP |
| Frequency - Transition | 80MHz |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA, 300mV @ 10mA, 100mA |
| Current - Collector (Ic) (Max) | 150mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
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