HGTG30N60B3
600 V, NPT IGBT
Transistors Igbts Single
TO-247-3
Obsolete
$2.91 / unit (market reference)
MOQ: 104 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | HGTG30N60B3 |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 208 W |
| Supplier Device Package | TO-247 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
HGTG30N60B3 by Rochester Electronics, LLC is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for HGTG30N60B3
Alternatives & Replacements
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FGH20N6S2D
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All Technical Specifications
| Input Type | Standard |
| Gate Charge | 170 nC |
| Power - Max | 208 W |
| Test Condition | 480V, 30A, 3Ohm, 15V |
| Switching Energy | 500µJ (on), 680µJ (off) |
| Td (on/off) @ 25°C | 36ns/137ns |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 30A |
| Current - Collector (Ic) (Max) | 60 A |
| Current - Collector Pulsed (Icm) | 220 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
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