HGTD3N60B3
7A, 600V, N-CHANNEL IGBT
Transistors Igbts Single
TO-251-3 Short Leads, IPak, TO-251AA
Active
$0.47 / unit (market reference)
MOQ: 642 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | HGTD3N60B3 |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 33.3 W |
| Supplier Device Package | I-PAK |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
HGTD3N60B3 by Rochester Electronics, LLC is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-251-3 Short Leads, IPak, TO-251AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for HGTD3N60B3
Alternatives & Replacements
View All →SGU20N40LTU
IGBT, 400V, N-CHANNEL, TO-251
HGTD8P50G1
8A, 500V P-CHANNEL IGBT
SGU15N40LTU
IGBT, 400V, N-CHANNEL, TO-251
HGTD3N60C3
6A, 600V, N-CHANNEL IGBT
HGTD10N50F1
10A, 500V N-CHANNEL IGBT
IKU04N60R
IGBT, 8A, 600V, N-CHANNEL
All Technical Specifications
| Input Type | Standard |
| Gate Charge | 21 nC |
| Power - Max | 33.3 W |
| Test Condition | 480V, 3.5A, 82Ohm, 15V |
| Switching Energy | 66µJ (on), 88µJ (off) |
| Td (on/off) @ 25°C | 18ns/105ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 3.5A |
| Reverse Recovery Time (trr) | 16 ns |
| Current - Collector (Ic) (Max) | 7 A |
| Current - Collector Pulsed (Icm) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
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