HAT2054M-EL-E
MOSFET N-CH 30V 6.3A 6TSOP
Transistors Fets Mosfets Single
SOT-23-6 Thin, TSOT-23-6
Active
$0.55 / unit (market reference)
MOQ: 550 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | HAT2054M-EL-E |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Rds On (Max) | 31mOhm @ 3A, 10V |
| Vgs(th) (Max) | 2.5V @ 1mA |
| Input Capacitance (Ciss) | 620 pF @ 10 V |
| Power Dissipation (Max) | 1.05W (Ta) |
| Supplier Device Package | 6-TSOP |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
HAT2054M-EL-E by Rochester Electronics, LLC is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-23-6 Thin, TSOT-23-6 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 31mOhm @ 3A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for HAT2054M-EL-E
Alternatives & Replacements
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MOSFET N-CH 30V 5.2A SUPERSOT6
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CPH6355-TL-W
SINGLE P-CHANNEL POWER MOSFET, -
FDC655AN
MOSFET N-CH 30V 6.3A SUPERSOT6
SI3457DV
SMALL SIGNAL FIELD-EFFECT TRANSI
NTGD4169FT1G
MOSFET N-CH 30V 2.6A 6TSOP
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 3A, 10V |
| Power Dissipation (Max) | 1.05W (Ta) |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 620 pF @ 10 V |
| Current - Continuous Drain (Id) @ 25°C | 6.3A (Ta) |
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