HAT1043M-EL-E
4.4A, 20V, P-CHANNEL MOSFET
Transistors Fets Mosfets Single
SOT-23-6 Thin, TSOT-23-6
Active
$1.09 / unit (market reference)
MOQ: 275 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | HAT1043M-EL-E |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 20 V |
| Rds On (Max) | 65mOhm @ 3A, 4.5V |
| Gate Charge (Qg) | 11 nC @ 4.5 V |
| Input Capacitance (Ciss) | 750 pF @ 10 V |
| Power Dissipation (Max) | 1.05W (Ta) |
| Supplier Device Package | 6-TSOP |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
HAT1043M-EL-E by Rochester Electronics, LLC is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-23-6 Thin, TSOT-23-6 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 65mOhm @ 3A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for HAT1043M-EL-E
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All Technical Specifications
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 3A, 4.5V |
| Power Dissipation (Max) | 1.05W (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 750 pF @ 10 V |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Ta) |
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