GaNPowerDieRoHS
GPI65060DFN
GANFET N-CH 650V 60A DFN8X8
Category
Subcategory
Transistors Fets Mosfets Single
Package
Die
Status
Active
$30.00 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | GaNPower |
| Model | GPI65060DFN |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 650 V |
| Vgs(th) (Max) | 1.2V @ 3.5mA |
| Gate Charge (Qg) | 16 nC @ 6 V |
| Input Capacitance (Ciss) | 420 pF @ 400 V |
| Drive Voltage | 6V |
| Supplier Device Package | Die |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
GPI65060DFN by GaNPower is an N-channel power MOSFET rated at 650 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Die package offers good thermal performance for SMT mounting. Key spec: Rds(on) max -. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | +7.5V, -12V |
| Technology | GaNFET (Gallium Nitride) |
| Vgs(th) (Max) @ Id | 1.2V @ 3.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 6 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 420 pF @ 400 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V |
| Current - Continuous Drain (Id) @ 25°C | 60A |
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