GA1L4M-T2-A
SMALL SIGNAL BIPOLAR TRANSISTOR
Transistors Bipolar Bjt Single Pre Biased
SC-70, SOT-323
Obsolete
$0.10 / unit (market reference)
MOQ: 2885 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | GA1L4M-T2-A |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Power Dissipation (Max) | 150 mW |
| Supplier Device Package | SC-70 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
GA1L4M-T2-A by Rochester Electronics, LLC is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SC-70, SOT-323 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for GA1L4M-T2-A
Alternatives & Replacements
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TRANS PREBIAS PNP 50V SC70-3
SMUN5211T1G
TRANS PREBIAS NPN 50V SC70-3
MUN5135T1G
TRANS PREBIAS PNP 50V SC70-3
MUN5130T1G
TRANS PREBIAS PNP 50V SC70-3
MUN5141T1G
TRANS PREBIAS PNP 50V SC70-3
BCR129WH6327XTSA1
TRANS PREBIAS NPN 250MW SOT323-3
All Technical Specifications
| Power - Max | 150 mW |
| Transistor Type | NPN - Pre-Biased |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 250µA, 5mA |
| Current - Collector (Ic) (Max) | 100 mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 95 @ 50mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
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