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Goford SemiconductorTO-236-3, SC-59, SOT-23-3RoHS

G6N02L

MOSFET N-CH 20V 6A SOT-23-3L

Subcategory

Transistors Fets Mosfets Single

Package

TO-236-3, SC-59, SOT-23-3

Status

Active

Datasheet

http://www.gofordsemi.com/404.php

$0.42 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandGoford Semiconductor
ModelG6N02L
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)20 V
Rds On (Max)11.3mOhm @ 3A, 4.5V
Vgs(th) (Max)0.9V @ 250µA
Gate Charge (Qg)12.5 nC @ 10 V
Input Capacitance (Ciss)1140 pF @ 10 V
Power Dissipation (Max)1.8W (Tc)
Drive Voltage2.5V, 4.5V
Supplier Device PackageSOT-23-3
RoHSRoHS
Part StatusActive

Application & Notes

G6N02L by Goford Semiconductor is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 11.3mOhm @ 3A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±12V
TechnologyMOSFET (Metal Oxide)
FET FeatureStandard
Vgs(th) (Max) @ Id0.9V @ 250µA
Rds On (Max) @ Id, Vgs11.3mOhm @ 3A, 4.5V
Power Dissipation (Max)1.8W (Tc)
Gate Charge (Qg) (Max) @ Vgs12.5 nC @ 10 V
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds1140 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C6A (Tc)

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