Goford Semiconductor8-PowerTDFNRoHS
G65P06D5
P60V,RD(MAX)<18M@-10V,VTH-2V~-3V
Category
Subcategory
Transistors Fets Mosfets Single
Package
8-PowerTDFN
Status
Active
$1.38 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Goford Semiconductor |
| Model | G65P06D5 |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 60 V |
| Rds On (Max) | 18mOhm @ 20A, 10V |
| Vgs(th) (Max) | 3.5V @ 250µA |
| Gate Charge (Qg) | 75 nC @ 10 V |
| Input Capacitance (Ciss) | 5814 pF @ 25 V |
| Power Dissipation (Max) | 130W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | 8-DFN (4.9x5.75) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
G65P06D5 by Goford Semiconductor is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerTDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 18mOhm @ 20A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 20A, 10V |
| Power Dissipation (Max) | 130W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5814 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
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