Goford Semiconductor8-PowerVDFNRoHS
G30N04D3
MOSFET N-CH 40V 30A DFN33-8L
Category
Subcategory
Transistors Fets Mosfets Single
Package
8-PowerVDFN
Status
Active
Datasheet
$0.73 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Goford Semiconductor |
| Model | G30N04D3 |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 40 V |
| Rds On (Max) | 9.5mOhm @ 20A, 10V |
| Vgs(th) (Max) | 2.5V @ 250µA |
| Gate Charge (Qg) | 30 nC @ 10 V |
| Input Capacitance (Ciss) | 1780 pF @ 20 V |
| Power Dissipation (Max) | 19.8W (Tc) |
| Drive Voltage | 4.5V, 10V |
| Supplier Device Package | 8-DFN (3x3) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
G30N04D3 by Goford Semiconductor is an N-channel power MOSFET rated at 40 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerVDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 9.5mOhm @ 20A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
You may also need
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Standard |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 20A, 10V |
| Power Dissipation (Max) | 19.8W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 40 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1780 pF @ 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.