Goford SemiconductorTO-236-3, SC-59, SOT-23-3RoHS
G3035
P30V,RD(MAX)<59M@-10V,RD(MAX)<75
Category
Subcategory
Transistors Fets Mosfets Single
Package
TO-236-3, SC-59, SOT-23-3
Status
Active
$0.45 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Goford Semiconductor |
| Model | G3035 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Rds On (Max) | 59mOhm @ 4A, 10V |
| Vgs(th) (Max) | 2V @ 250µA |
| Gate Charge (Qg) | 13 nC @ 10 V |
| Input Capacitance (Ciss) | 650 pF @ 15 V |
| Power Dissipation (Max) | 1.4W (Tc) |
| Drive Voltage | 4.5V, 10V |
| Supplier Device Package | SOT-23-3 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
G3035 by Goford Semiconductor is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 59mOhm @ 4A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Rds On (Max) @ Id, Vgs | 59mOhm @ 4A, 10V |
| Power Dissipation (Max) | 1.4W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 650 pF @ 15 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 4.6A (Tc) |
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