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onsemiTO-264-3, TO-264AARoHS

FQL40N50

MOSFET N-CH 500V 40A TO264-3

FQL40N50 by onsemi
Subcategory

Transistors Fets Mosfets Single

Package

TO-264-3, TO-264AA

Series

QFET®

Status

Last Time Buy

Datasheet

View Datasheet ↗

$8.84 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

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Parameters

ParameterValue
Brandonsemi
ModelFQL40N50
Package / CaseTO-264-3, TO-264AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)500 V
Rds On (Max)110mOhm @ 20A, 10V
Vgs(th) (Max)5V @ 250µA
Gate Charge (Qg)200 nC @ 10 V
Input Capacitance (Ciss)7500 pF @ 25 V
Power Dissipation (Max)460W (Tc)
Drive Voltage10V
Supplier Device PackageTO-264-3
RoHSRoHS
Part StatusLast Time Buy

Application & Notes

FQL40N50 by onsemi is an N-channel power MOSFET rated at 500 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-264-3, TO-264AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 110mOhm @ 20A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for FQL40N50

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MOSFET Alternatives: IRFZ44N, AO3400, IRF4905 & More — Cross Reference Guide

Components Guide

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Power Discrete Alternatives Guide: MOSFET, IGBT, SiC, GaN Cross-Reference

Components Guide

Alternatives & Replacements

View All →
Rochester Electronics, LLCStockTO-264-3, TO-264AA

NTY100N10G

MOSFET N-CH 100V 123A TO264

Request QuoteRFQ →
IXYSStockTO-264-3, TO-264AA

IXTK90P20P

MOSFET P-CH 200V 90A TO264

Request QuoteRFQ →
IXYSStockTO-264-3, TO-264AA

IXTK170P10P

MOSFET P-CH 100V 170A TO264

Request QuoteRFQ →
IXYSStockTO-264-3, TO-264AA

IXFK24N100Q3

MOSFET N-CH 1000V 24A TO264AA

Request QuoteRFQ →
IXYSStockTO-264-3, TO-264AA

IXTK5N250

MOSFET N-CH 2500V 5A TO264

Request QuoteRFQ →
Rochester Electronics, LLCStockTO-264-3, TO-264AA

FQL50N40

MOSFET N-CH 400V 50A TO264-3

Request QuoteRFQ →

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id5V @ 250µA
Rds On (Max) @ Id, Vgs110mOhm @ 20A, 10V
Power Dissipation (Max)460W (Tc)
Gate Charge (Qg) (Max) @ Vgs200 nC @ 10 V
Drain to Source Voltage (Vdss)500 V
Input Capacitance (Ciss) (Max) @ Vds7500 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C40A (Tc)

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