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Rochester Electronics, LLCTO-3P-3 Full PackRoHS

FQAF90N08

MOSFET N-CH 80V 56A TO3PF

FQAF90N08 by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Single

Package

TO-3P-3 Full Pack

Series

QFET®

Status

Obsolete

$2.37 / unit (market reference)

MOQ: 127 pcs

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelFQAF90N08
Package / CaseTO-3P-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)80 V
Rds On (Max)16mOhm @ 28A, 10V
Vgs(th) (Max)4V @ 250µA
Gate Charge (Qg)110 nC @ 10 V
Input Capacitance (Ciss)3250 pF @ 25 V
Power Dissipation (Max)100W (Tc)
Drive Voltage10V
Supplier Device PackageTO-3PF
RoHSRoHS
Part StatusObsolete

Application & Notes

FQAF90N08 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 80 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-3P-3 Full Pack package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 16mOhm @ 28A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±25V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250µA
Rds On (Max) @ Id, Vgs16mOhm @ 28A, 10V
Power Dissipation (Max)100W (Tc)
Gate Charge (Qg) (Max) @ Vgs110 nC @ 10 V
Drain to Source Voltage (Vdss)80 V
Input Capacitance (Ciss) (Max) @ Vds3250 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C56A (Tc)

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