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onsemiTO-3P-3 Full PackRoHS

FQAF16N50

MOSFET N-CH 500V 11.3A TO3PF

FQAF16N50 by onsemi
Subcategory

Transistors Fets Mosfets Single

Package

TO-3P-3 Full Pack

Series

QFET®

Status

Active

Datasheet

View Datasheet ↗

$3.57 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
Brandonsemi
ModelFQAF16N50
Package / CaseTO-3P-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)500 V
Rds On (Max)320mOhm @ 5.65A, 10V
Vgs(th) (Max)5V @ 250µA
Gate Charge (Qg)75 nC @ 10 V
Input Capacitance (Ciss)3000 pF @ 25 V
Power Dissipation (Max)110W (Tc)
Drive Voltage10V
Supplier Device PackageTO-3PF
RoHSRoHS
Part StatusActive

Application & Notes

FQAF16N50 by onsemi is an N-channel power MOSFET rated at 500 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-3P-3 Full Pack package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 320mOhm @ 5.65A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for FQAF16N50

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id5V @ 250µA
Rds On (Max) @ Id, Vgs320mOhm @ 5.65A, 10V
Power Dissipation (Max)110W (Tc)
Gate Charge (Qg) (Max) @ Vgs75 nC @ 10 V
Drain to Source Voltage (Vdss)500 V
Input Capacitance (Ciss) (Max) @ Vds3000 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C11.3A (Tc)

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