FJV4101RMTF
0.1A, 50V, PNP
Transistors Bipolar Bjt Single Pre Biased
TO-236-3, SC-59, SOT-23-3
Active
$0.02 / unit (market reference)
MOQ: 15000 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | FJV4101RMTF |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Power Dissipation (Max) | 200 mW |
| Supplier Device Package | SOT-23-3 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
FJV4101RMTF by Rochester Electronics, LLC is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for FJV4101RMTF
Alternatives & Replacements
View All →MMUN2215LT1G
TRANS PREBIAS NPN 50V SOT23-3
MMUN2238LT1G
TRANS PREBIAS NPN 50V SOT23-3
MUN2211T3G
TRANS PREBIAS NPN 50V 100MA SC59
DDTD113ZC-7-F
TRANS PREBIAS NPN 200MW SOT23-3
SMMUN2214LT1G
TRANS PREBIAS NPN 50V SOT23
DDTC143ZCA-7-F
TRANS PREBIAS NPN 200MW SOT23-3
All Technical Specifications
| Power - Max | 200 mW |
| Transistor Type | PNP - Pre-Biased |
| Resistor - Base (R1) | 4.7 kOhms |
| Frequency - Transition | 200 MHz |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector (Ic) (Max) | 100 mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 10mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.