Rochester Electronics, LLCTO-226-3, TO-92-3 (TO-226AA) Formed LeadsRoHS
FJN3310RTA
SMALL SIGNAL BIPOLAR TRANSISTOR
Category
Subcategory
Transistors Bipolar Bjt Single Pre Biased
Package
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Status
Obsolete
Datasheet
$0.02 / unit (market reference)
MOQ: 15000 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | FJN3310RTA |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Power Dissipation (Max) | 300 mW |
| Supplier Device Package | TO-92-3 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
FJN3310RTA by Rochester Electronics, LLC is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-226-3, TO-92-3 (TO-226AA) Formed Leads package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for FJN3310RTA
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All Technical Specifications
| Power - Max | 300 mW |
| Transistor Type | NPN - Pre-Biased |
| Resistor - Base (R1) | 10 kOhms |
| Frequency - Transition | 250 MHz |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
| Current - Collector (Ic) (Max) | 100 mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
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