IXYSi4-Pac™-5RoHS
FIO50-12BD
IGBT 1200V 50A 200W I4PAC5
Category
Subcategory
Transistors Igbts Single
Package
i4-Pac™-5
Status
Obsolete
Price available on request
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | IXYS |
| Model | FIO50-12BD |
| Package / Case | i4-Pac™-5 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 200 W |
| Supplier Device Package | ISOPLUS i4-PAC™ |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
FIO50-12BD by IXYS is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The i4-Pac™-5 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| IGBT Type | NPT |
| Input Type | Standard |
| Gate Charge | 150 nC |
| Power - Max | 200 W |
| Test Condition | 600V, 30A, 39Ohm, 15V |
| Switching Energy | 4.6mJ (on), 2.2mJ (off) |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 30A |
| Reverse Recovery Time (trr) | 150 ns |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
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