FDN363N
N-CHANNEL POWER MOSFET
Transistors Fets Mosfets Single
TO-236-3, SC-59, SOT-23-3
PowerTrench®
Active
$0.17 / unit (market reference)
MOQ: 1803 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | FDN363N |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 100 V |
| Rds On (Max) | 240mOhm @ 1A, 10V |
| Vgs(th) (Max) | 4V @ 250µA |
| Gate Charge (Qg) | 5.2 nC @ 10 V |
| Input Capacitance (Ciss) | 200 pF @ 25 V |
| Power Dissipation (Max) | 500mW (Tc) |
| Drive Voltage | 6V, 10V |
| Supplier Device Package | SuperSOT™-3 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
FDN363N by Rochester Electronics, LLC is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 240mOhm @ 1A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for FDN363N
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MOSFET N-CH 35V 3A 3CPH
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 1A, 10V |
| Power Dissipation (Max) | 500mW (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 5.2 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 1A (Tc) |
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