PC
Rochester Electronics, LLC8-PowerTDFNRoHS

FDMS8570S

POWER FIELD-EFFECT TRANSISTOR, 2

FDMS8570S by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Single

Package

8-PowerTDFN

Series

PowerTrench®, SyncFET™

Status

Active

$0.51 / unit (market reference)

MOQ: 589 pcs

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelFDMS8570S
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)25 V
Rds On (Max)2.8mOhm @ 24A, 10V
Vgs(th) (Max)2.2V @ 1mA
Gate Charge (Qg)425 nC @ 10 V
Input Capacitance (Ciss)2825 pF @ 13 V
Power Dissipation (Max)2.5W (Ta), 48W (Tc)
Drive Voltage4.5V, 10V
Supplier Device Package8-PQFN (5x6)
RoHSRoHS
Part StatusActive

Application & Notes

FDMS8570S by Rochester Electronics, LLC is an N-channel power MOSFET rated at 25 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerTDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 2.8mOhm @ 24A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±12V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.2V @ 1mA
Rds On (Max) @ Id, Vgs2.8mOhm @ 24A, 10V
Power Dissipation (Max)2.5W (Ta), 48W (Tc)
Gate Charge (Qg) (Max) @ Vgs425 nC @ 10 V
Drain to Source Voltage (Vdss)25 V
Input Capacitance (Ciss) (Max) @ Vds2825 pF @ 13 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C24A (Ta), 60A (Tc)

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