FDMS0355S
POWER FIELD-EFFECT TRANSISTOR
Transistors Fets Mosfets Single
8-PowerTDFN
PowerTrench®
Active
$0.25 / unit (market reference)
MOQ: 1202 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | FDMS0355S |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Rds On (Max) | 5mOhm @ 18A, 10V |
| Vgs(th) (Max) | 3V @ 1mA |
| Gate Charge (Qg) | 31 nC @ 10 V |
| Input Capacitance (Ciss) | 1815 pF @ 15 V |
| Power Dissipation (Max) | 2.5W (Ta), 36W (Tc) |
| Drive Voltage | 4.5V, 10V |
| Supplier Device Package | 8-PQFN (5x6), Power56 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
FDMS0355S by Rochester Electronics, LLC is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerTDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 5mOhm @ 18A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for FDMS0355S
Alternatives & Replacements
View All →FDMS8025S
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CSD17555Q5A
MOSFET N-CH 30V 24A/100A 8VSON
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 18A, 10V |
| Power Dissipation (Max) | 2.5W (Ta), 36W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1815 pF @ 15 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta), 22A (Tc) |
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