FDMC6686P
MOSFET P-CH 20V 18A/56A 8PQFN
Transistors Fets Mosfets Single
8-PowerWDFN
PowerTrench®
Last Time Buy
$1.97 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | onsemi |
| Model | FDMC6686P |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 20 V |
| Rds On (Max) | 4mOhm @ 18A, 4.5V |
| Vgs(th) (Max) | 1V @ 250µA |
| Gate Charge (Qg) | 122 nC @ 4.5 V |
| Input Capacitance (Ciss) | 13200 pF @ 10 V |
| Power Dissipation (Max) | 2.3W (Ta), 40W (Tc) |
| Drive Voltage | 1.8V, 4.5V |
| Supplier Device Package | 8-PQFN (3.3x3.3), Power33 |
| RoHS | RoHS |
| Part Status | Last Time Buy |
Application & Notes
FDMC6686P by onsemi is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerWDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 4mOhm @ 18A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for FDMC6686P
Alternatives & Replacements
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FDMC86106LZ
MOSFET N-CH 100V 3.3A POWER33
All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 18A, 4.5V |
| Power Dissipation (Max) | 2.3W (Ta), 40W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 122 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13200 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta), 56A (Tc) |
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