FDG316P
SMALL SIGNAL FIELD-EFFECT TRANSI
Transistors Fets Mosfets Single
6-TSSOP, SC-88, SOT-363
PowerTrench®
Active
$0.19 / unit (market reference)
MOQ: 1588 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | FDG316P |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Rds On (Max) | 190mOhm @ 1.6A, 10V |
| Vgs(th) (Max) | 3V @ 250µA |
| Gate Charge (Qg) | 5 nC @ 10 V |
| Input Capacitance (Ciss) | 165 pF @ 15 V |
| Power Dissipation (Max) | 750mW (Ta) |
| Drive Voltage | 4.5V, 10V |
| Supplier Device Package | SC-88 (SC-70-6) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
FDG316P by Rochester Electronics, LLC is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-TSSOP, SC-88, SOT-363 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 190mOhm @ 1.6A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for FDG316P
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All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 1.6A, 10V |
| Power Dissipation (Max) | 750mW (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 165 pF @ 15 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Ta) |
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