PC
Rochester Electronics, LLC6-TSSOP, SC-88, SOT-363RoHS

FDG315N

2A, 30V, N-CHANNEL, MOSFET

FDG315N by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Single

Package

6-TSSOP, SC-88, SOT-363

Series

PowerTrench®

Status

Active

$0.26 / unit (market reference)

MOQ: 1165 pcs

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelFDG315N
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)30 V
Rds On (Max)120mOhm @ 2A, 10V
Vgs(th) (Max)3V @ 250µA
Gate Charge (Qg)4 nC @ 5 V
Input Capacitance (Ciss)220 pF @ 15 V
Power Dissipation (Max)750mW (Ta)
Drive Voltage4.5V, 10V
Supplier Device PackageSC-88 (SC-70-6)
RoHSRoHS
Part StatusActive

Application & Notes

FDG315N by Rochester Electronics, LLC is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-TSSOP, SC-88, SOT-363 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 120mOhm @ 2A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250µA
Rds On (Max) @ Id, Vgs120mOhm @ 2A, 10V
Power Dissipation (Max)750mW (Ta)
Gate Charge (Qg) (Max) @ Vgs4 nC @ 5 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds220 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C2A (Ta)

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