FDFMA2N028Z
MOSFET N-CH 20V 3.7A 6MICROFET
Transistors Fets Mosfets Single
6-VDFN Exposed Pad
PowerTrench®
Obsolete
$0.70 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | onsemi |
| Model | FDFMA2N028Z |
| Package / Case | 6-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 20 V |
| Rds On (Max) | 68mOhm @ 3.7A, 4.5V |
| Vgs(th) (Max) | 1.5V @ 250µA |
| Gate Charge (Qg) | 6 nC @ 4.5 V |
| Input Capacitance (Ciss) | 455 pF @ 10 V |
| Power Dissipation (Max) | 1.4W (Tj) |
| Drive Voltage | 2.5V, 4.5V |
| Supplier Device Package | 6-MicroFET (2x2) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
FDFMA2N028Z by onsemi is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-VDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 68mOhm @ 3.7A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for FDFMA2N028Z
Alternatives & Replacements
View All →FDFMA2P853
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FDFMA2P853T
MOSFET P-CH 20V 3A MICROFET
FDFMA2P853
MOSFET P-CH 20V 3A 6MICROFET
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±12V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Schottky Diode (Isolated) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 68mOhm @ 3.7A, 4.5V |
| Power Dissipation (Max) | 1.4W (Tj) |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 455 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 3.7A (Ta) |
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