PC
CategoriesBrandsBOMBlogAbout
onsemiSOT-23-6 Thin, TSOT-23-6RoHS

FDC8884

MOSFET N-CH 30V 6.5/8A SUPERSOT6

FDC8884 by onsemi
Subcategory

Transistors Fets Mosfets Single

Package

SOT-23-6 Thin, TSOT-23-6

Series

PowerTrench®

Status

Obsolete

Datasheet

View Datasheet ↗

$0.44 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

✅ 365-Day Warranty🚚 Global Shipping

Parameters

ParameterValue
Brandonsemi
ModelFDC8884
Package / CaseSOT-23-6 Thin, TSOT-23-6
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)30 V
Rds On (Max)23mOhm @ 6.5A, 10V
Vgs(th) (Max)3V @ 250µA
Gate Charge (Qg)7.4 nC @ 10 V
Input Capacitance (Ciss)465 pF @ 15 V
Power Dissipation (Max)1.6W (Ta)
Drive Voltage4.5V, 10V
Supplier Device PackageSuperSOT™-6
RoHSRoHS
Part StatusObsolete

Application & Notes

FDC8884 by onsemi is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-23-6 Thin, TSOT-23-6 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 23mOhm @ 6.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for FDC8884

📄

MOSFET Alternatives: IRFZ44N, AO3400, IRF4905 & More — Cross Reference Guide

Components Guide

📄

Power Discrete Alternatives Guide: MOSFET, IGBT, SiC, GaN Cross-Reference

Components Guide

Alternatives & Replacements

View All →
Rochester Electronics, LLCStockSOT-23-6 Thin, TSOT-23-6

FDC633N

MOSFET N-CH 30V 5.2A SUPERSOT6

Request QuoteRFQ →
Infineon TechnologiesStockSOT-23-6 Thin, TSOT-23-6

BSL307SPL6327HTSA1

MOSFET P-CH 30V 5.5A TSOP-6

Request QuoteRFQ →
Rochester Electronics, LLCStockSOT-23-6 Thin, TSOT-23-6

CPH6355-TL-W

SINGLE P-CHANNEL POWER MOSFET, -

Request QuoteRFQ →
Rochester Electronics, LLCStockSOT-23-6 Thin, TSOT-23-6

FDC655AN

MOSFET N-CH 30V 6.3A SUPERSOT6

Request QuoteRFQ →
Rochester Electronics, LLCStockSOT-23-6 Thin, TSOT-23-6

SI3457DV

SMALL SIGNAL FIELD-EFFECT TRANSI

Request QuoteRFQ →
onsemiStockSOT-23-6 Thin, TSOT-23-6

NTGD4169FT1G

MOSFET N-CH 30V 2.6A 6TSOP

Request QuoteRFQ →

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250µA
Rds On (Max) @ Id, Vgs23mOhm @ 6.5A, 10V
Power Dissipation (Max)1.6W (Ta)
Gate Charge (Qg) (Max) @ Vgs7.4 nC @ 10 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds465 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C6.5A (Ta), 8A (Tc)

Request a Quote

Submit your quantity and details — we will reply within 24 hours.