EPC Space4-SMD, No LeadRoHS
FBG30N04CC
GAN FET HEMT 300V4A COTS 4FSMD-C
Category
Subcategory
Transistors Fets Mosfets Single
Package
4-SMD, No Lead
Status
Active
$346.39 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | EPC Space |
| Model | FBG30N04CC |
| Package / Case | 4-SMD, No Lead |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 300 V |
| Rds On (Max) | 404mOhm @ 4A, 5V |
| Vgs(th) (Max) | 2.8V @ 600µA |
| Gate Charge (Qg) | 2.6 nC @ 5 V |
| Input Capacitance (Ciss) | 450 pF @ 150 V |
| Drive Voltage | 5V |
| Supplier Device Package | 4-SMD |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
FBG30N04CC by EPC Space is an N-channel power MOSFET rated at 300 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 4-SMD, No Lead package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 404mOhm @ 4A, 5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | +6V, -4V |
| Technology | GaNFET (Gallium Nitride) |
| Vgs(th) (Max) @ Id | 2.8V @ 600µA |
| Rds On (Max) @ Id, Vgs | 404mOhm @ 4A, 5V |
| Gate Charge (Qg) (Max) @ Vgs | 2.6 nC @ 5 V |
| Drain to Source Voltage (Vdss) | 300 V |
| Input Capacitance (Ciss) (Max) @ Vds | 450 pF @ 150 V |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
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