ES6U1T2R
MOSFET P-CH 12V 1.3A 6WEMT
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Transistors Fets Mosfets Single
6-SMD, Flat Leads
Last Time Buy
$0.44 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rohm Semiconductor |
| Model | ES6U1T2R |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 12 V |
| Rds On (Max) | 260mOhm @ 1.3A, 4.5V |
| Vgs(th) (Max) | 1V @ 1mA |
| Gate Charge (Qg) | 2.4 nC @ 4.5 V |
| Input Capacitance (Ciss) | 290 pF @ 6 V |
| Power Dissipation (Max) | 700mW (Ta) |
| Drive Voltage | 1.5V, 4.5V |
| Supplier Device Package | 6-WEMT |
| RoHS | RoHS |
| Part Status | Last Time Buy |
Application & Notes
ES6U1T2R by Rohm Semiconductor is an N-channel power MOSFET rated at 12 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-SMD, Flat Leads package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 260mOhm @ 1.3A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for ES6U1T2R
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All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±10V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Schottky Diode (Isolated) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Rds On (Max) @ Id, Vgs | 260mOhm @ 1.3A, 4.5V |
| Power Dissipation (Max) | 700mW (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 2.4 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 12 V |
| Input Capacitance (Ciss) (Max) @ Vds | 290 pF @ 6 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 1.3A (Ta) |
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