GAN FET HEMT 60V 1A COTS 4UB
Transistors Fets Mosfets Single
4-SMD, No Lead
Active
$209.48 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
| Parameter | Value |
|---|---|
| Brand | EPC Space |
| Model | EPC7014UBC |
| Package / Case | 4-SMD, No Lead |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 60 V |
| Rds On (Max) | 580mOhm @ 1A, 5V |
| Vgs(th) (Max) | 2.5V @ 140µA |
| Input Capacitance (Ciss) | 22 pF @ 30 V |
| Drive Voltage | 5V |
| Supplier Device Package | 4-SMD |
| RoHS | RoHS |
| Part Status | Active |
EPC7014UBC by EPC Space is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 4-SMD, No Lead package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 580mOhm @ 1A, 5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
30 V, SINGLE P-CHANNEL TRENCH MO
P-CHANNEL MOSFET
SMALL SIGNAL FET
MOSFET N-CH 60V 2.6A SOT223-4
POWER FIELD-EFFECT TRANSISTOR
POWER TRANSISTOR, MOSFET
| FET Type | N-Channel |
| Vgs (Max) | +7V, -4V |
| Technology | GaNFET (Gallium Nitride) |
| Vgs(th) (Max) @ Id | 2.5V @ 140µA |
| Rds On (Max) @ Id, Vgs | 580mOhm @ 1A, 5V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 22 pF @ 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Current - Continuous Drain (Id) @ 25°C | 1A (Tc) |
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