PartsCubeGlobal
EPCDieRoHS

EPC2207

TRANS GAN 200V DIE .022OHM

Subcategory

Transistors Fets Mosfets Single

Package

Die

Status

Active

$3.21 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandEPC
ModelEPC2207
Package / CaseDie
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)200 V
Rds On (Max)22mOhm @ 14A, 5V
Vgs(th) (Max)2.5V @ 2mA
Gate Charge (Qg)5.9 nC @ 5 V
Input Capacitance (Ciss)600 pF @ 100 V
Drive Voltage5V
Supplier Device PackageDie
RoHSRoHS
Part StatusActive

Application & Notes

EPC2207 by EPC is an N-channel power MOSFET rated at 200 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Die package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 22mOhm @ 14A, 5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)+6V, -4V
TechnologyGaNFET (Gallium Nitride)
Vgs(th) (Max) @ Id2.5V @ 2mA
Rds On (Max) @ Id, Vgs22mOhm @ 14A, 5V
Gate Charge (Qg) (Max) @ Vgs5.9 nC @ 5 V
Drain to Source Voltage (Vdss)200 V
Input Capacitance (Ciss) (Max) @ Vds600 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)5V
Current - Continuous Drain (Id) @ 25°C14A (Ta)

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