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EPCDieRoHS

EPC2025

GANFET N-CH 300V 4A DIE

Subcategory

Transistors Fets Mosfets Single

Package

Die

Series

eGaN®

Status

Obsolete

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandEPC
ModelEPC2025
Package / CaseDie
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)300 V
Rds On (Max)150mOhm @ 3A, 5V
Vgs(th) (Max)2.5V @ 1mA
Input Capacitance (Ciss)194 pF @ 240 V
Drive Voltage5V
Supplier Device PackageDie
RoHSRoHS
Part StatusObsolete

Application & Notes

EPC2025 by EPC is an N-channel power MOSFET rated at 300 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Die package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 150mOhm @ 3A, 5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)+6V, -4V
TechnologyGaNFET (Gallium Nitride)
Vgs(th) (Max) @ Id2.5V @ 1mA
Rds On (Max) @ Id, Vgs150mOhm @ 3A, 5V
Drain to Source Voltage (Vdss)300 V
Input Capacitance (Ciss) (Max) @ Vds194 pF @ 240 V
Drive Voltage (Max Rds On, Min Rds On)5V
Current - Continuous Drain (Id) @ 25°C4A (Ta)

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