EMG11T2R
TRANS 2NPN PREBIAS 0.15W EMT5
Transistors Bipolar Bjt Arrays Pre Biased
6-SMD (5 Leads), Flat Lead
Active
$0.46 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rohm Semiconductor |
| Model | EMG11T2R |
| Package / Case | 6-SMD (5 Leads), Flat Lead |
| Mounting Type | Surface Mount |
| Power Dissipation (Max) | 150mW |
| Supplier Device Package | EMT5 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
EMG11T2R by Rohm Semiconductor is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-SMD (5 Leads), Flat Lead package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for EMG11T2R
Alternatives & Replacements
View All →DMG563010R
TRANS PREBIAS NPN/PNP SMINI5
EMG1T2R
TRANS 2NPN PREBIAS 0.15W EMT5
DMC561000R
TRANS 2NPN PREBIAS 0.15W SMINI5
DMG563H50R
TRANS PREBIAS NPN/PNP SMINI5
DMC561050R
TRANS 2NPN PREBIAS 0.15W SMINI5
DMA5610M0R
TRANS PREBIAS DUAL PNP SMINI5
All Technical Specifications
| Power - Max | 150mW |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Resistor - Base (R1) | 2.2kOhms |
| Frequency - Transition | 250MHz |
| Resistor - Emitter Base (R2) | 47kOhms |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector (Ic) (Max) | 100mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.