DXTP5840CFDB-7
PWR LOW SAT TRANSISTOR U-DFN2020
Transistors Bipolar Bjt Single
3-UDFN Exposed Pad
Active
$0.44 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Diodes Incorporated |
| Model | DXTP5840CFDB-7 |
| Package / Case | 3-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 690 mW |
| Supplier Device Package | U-DFN2020-3 (Type B) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
DXTP5840CFDB-7 by Diodes Incorporated is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 3-UDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for DXTP5840CFDB-7
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All Technical Specifications
| Power - Max | 690 mW |
| Transistor Type | PNP |
| Frequency - Transition | 135MHz |
| Vce Saturation (Max) @ Ib, Ic | 370mV @ 30mA, 3A |
| Current - Collector (Ic) (Max) | 4.8 A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 10mA, 2V |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
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