DXTN10060DFJBQ-7
SS LOW SAT TRANSISTOR U-DFN2020-
Transistors Bipolar Bjt Single
3-UDFN Exposed Pad
Automotive, AEC-Q101
Active
$0.51 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Diodes Incorporated |
| Model | DXTN10060DFJBQ-7 |
| Package / Case | 3-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max) | 1.8 W |
| Supplier Device Package | U-DFN2020-3 (Type B) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
DXTN10060DFJBQ-7 by Diodes Incorporated is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 3-UDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for DXTN10060DFJBQ-7
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All Technical Specifications
| Power - Max | 1.8 W |
| Transistor Type | NPN |
| Frequency - Transition | 125MHz |
| Vce Saturation (Max) @ Ib, Ic | 320mV @ 200mA, 4A |
| Current - Collector (Ic) (Max) | 4 A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 340 @ 200mA, 2V |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
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