PC
Diodes IncorporatedTO-236-3, SC-59, SOT-23-3RoHS

DMN62D0U-7

MOSFET N-CH 60V 380MA SOT23

DMN62D0U-7 by Diodes Incorporated
Subcategory

Transistors Fets Mosfets Single

Package

TO-236-3, SC-59, SOT-23-3

Status

Active

$0.35 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandDiodes Incorporated
ModelDMN62D0U-7
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)60 V
Rds On (Max)2Ohm @ 100mA, 4.5V
Vgs(th) (Max)1V @ 250µA
Gate Charge (Qg)0.5 nC @ 4.5 V
Input Capacitance (Ciss)32 pF @ 30 V
Power Dissipation (Max)380mW (Ta)
Drive Voltage1.8V, 4.5V
Supplier Device PackageSOT-23-3
RoHSRoHS
Part StatusActive

Application & Notes

DMN62D0U-7 by Diodes Incorporated is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 2Ohm @ 100mA, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 250µA
Rds On (Max) @ Id, Vgs2Ohm @ 100mA, 4.5V
Power Dissipation (Max)380mW (Ta)
Gate Charge (Qg) (Max) @ Vgs0.5 nC @ 4.5 V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds32 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C380mA (Ta)

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