PC
Diodes IncorporatedTO-236-3, SC-59, SOT-23-3RoHS

DMN3023L-7

MOSFET N-CH 30V 6.2A SOT23

DMN3023L-7 by Diodes Incorporated
Subcategory

Transistors Fets Mosfets Single

Package

TO-236-3, SC-59, SOT-23-3

Status

Active

$0.41 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandDiodes Incorporated
ModelDMN3023L-7
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)30 V
Rds On (Max)25mOhm @ 4A, 10V
Vgs(th) (Max)1.8V @ 250µA
Gate Charge (Qg)18.4 nC @ 10 V
Input Capacitance (Ciss)873 pF @ 15 V
Power Dissipation (Max)900mW (Ta)
Drive Voltage2.5V, 10V
Supplier Device PackageSOT-23-3
RoHSRoHS
Part StatusActive

Application & Notes

DMN3023L-7 by Diodes Incorporated is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 25mOhm @ 4A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.8V @ 250µA
Rds On (Max) @ Id, Vgs25mOhm @ 4A, 10V
Power Dissipation (Max)900mW (Ta)
Gate Charge (Qg) (Max) @ Vgs18.4 nC @ 10 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds873 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Current - Continuous Drain (Id) @ 25°C6.2A (Ta)

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